Silicon Carbide and its Importance in Apex Products

Silicon Carbide Technology

Silicon Carbide (SiC) is a compound material composed of silicon (Si) and carbon (C) that is utilized in the semiconductor industry to gain an efficiency advantage over traditional silicon devices. The physical bond of Silicon Carbide is extremely durable which gives the material increased thermal stability; the wide band gap and broad thermal capabilities allow for an expanded temperature range compared to traditional silicon. Some of the benefits that give Silicon Carbide products the advantage over typical materials can be:

Efficiency Advantages

• Excellent switching characteristics over wide temperature ranges
• Reduced power loss compared to silicon or IGBT solutions
• Lower application/system operating cost

Reduced Heatsinking

• Compact modules
• Lighter systems
• Increased portability

Enhanced Capabilities

• Increased power delivered
• Improved reliability
• Broad operational temperature range
• Increased voltage supplies

Apex Microtechnology offers a family of products that utilize Silicon Carbide MOSFET technology, this includes the SA310 and SA110 as well as products currently in development. The value of using Silicon Carbide in Apex power modules is realized in several areas:

• Excellent switching performance, which allows for the lowest possible switching losses
• Integrated gate drive, which can allow for simplicity of use and reduced development costs
• Compact packaging to minimize device footprint and maximize power density

SA310

The SA310 is a fully integrated three-phase power module designed primarily to drive Brushless DC (BLDC) and Permanent Magnet Synchronous (PMSM) motors or DC/AC converters. The module uses Silicon Carbide MOSFET technology to improve efficiency over other devices in its class.

Key Specifications:

• SiC MOSFET technology
• Integrated gate drive
• Up to 650V Supply Voltage
• 30A Continuous Output Current per phase, 80A peak
• Up to 400kHz Switching Frequency 
• Internal bootstrap operation
• Under voltage lockout
• Active Miller Clamping
• Magnetic (transformer) Isolation
  To Learn More

SA110

The SA110 is a high current, high voltage half H-bridge integrated power module that uses Silicon Carbide (SiC) MOSFETs with integrated gate drive. The SA110 is ideal for applications where focus is on thermal performance, high efficiency, and having a compact design.

Key Specifications:

• SiC MOSFET technology
• Integrated gate drive
• 400V Supply Voltage
• 20A Continuous Output Current, up to 28A in A-grade
• 400kHz Switching Frequency  
• Under-Voltage Lock Out
• Active Miller Clamping